HXY MOSFETDatasheet (PDF)
AFGHL50T65SQD-HXY
IGBT 650V 80A 250W Through Hole TO-247
TO-247ROHS CompliantSold out at source
IGBT 650V 80A TO-247
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- AFGHL50T65SQD-HXY
- Store part #
- C49003419
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
16 in stock
#C49003419
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹685.22 | ₹685.22 |
| 10+ | ₹616.23 | ₹6,162.30 |
| 30+ | ₹574.96 | ₹17,248.80 |
| 90+ | ₹533.49 | ₹48,014.10 |
| 510+ | ₹514.36 | ₹2,62,323.60 |
| 990+ | ₹505.76 | ₹5,00,702.40 |
1 × ₹685.22
₹685.22
excl. GST
₹808.56 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
AFGHL50T65SQD-HXY
₹685.22 for 1 + GST
Specifications
- Pd - Power Dissipation
- 250W
- Td(off)
- 110ns
- Td(on)
- 17ns
- Current - Collector(Ic)
- 80A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 13pF
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 3.2V@250uA
- Operating Temperature
- -40℃~+175℃
- Vce Saturation(VCE(sat))
- 2.1V@50A,15V
- Reverse Recovery Time(trr)
- 56ns
- Switching Energy(Eoff)
- 510uJ
- Turn-On Energy (Eon)
- 1.35mJ
- Input Capacitance(Cies)
- 1.916nF@25V
- Output Capacitance(Coes)
- 139pF
- Gate Charge(Qg)
- 71nC@15V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.887 g
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