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MMBT5551Bipolar (BJT) Transistor NPN 160V 600mA 100MHz 300mW Surface Mount SOT-23
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SlkorDatasheet (PDF)
BFR540
12V 250 120mA NPN 1 NPN SOT-23 Single Bipolar Transistors
SOT-23RoHSActive
- Manufacturer
- Slkor
- Manufacturer part #
- BFR540
- Store part #
- C50087709
- Package / case
- SOT-23
- Category
- Single Bipolar Transistors
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
790 in stock
#C50087709
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹11.43 | ₹57.15 |
| 50+ | ₹9.22 | ₹461.00 |
| 150+ | ₹8.11 | ₹1,216.50 |
| 500+ | ₹7.28 | ₹3,640.00 |
| 3,000+ | ₹6.11 | ₹18,330.00 |
| 6,000+ | ₹5.78 | ₹34,680.00 |
5 × ₹11.43
₹57.15
excl. GST
₹67.44 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
BFR540
₹57.15 for 5 + GST
Specifications
- Current - Collector Cutoff
- 100nA
- Transition frequency(fT)
- 9GHz
- Collector - Emitter Voltage VCEO
- 12V
- DC Current Gain
- 250
- Emitter-Base Voltage VEBO
- 2.5V
- Current - Collector(Ic)
- 120mA
- Pd - Power Dissipation
- 500mW
- Configuration
- Standalone
- type
- NPN
- Number
- 1 NPN
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.034 g
Overview
This chip is manufactured using a silicon epitaxial process, featuring high power gain, broadband amplification, low noise, low leakage current, and small junction capacitance, with a large dynamic range and excellent current linearity. It is primarily used in UHF, microwave, and high-frequency broadband low-noise amplifiers.
Applications
- Ultra-high frequency microwave
- VHF
- UHF
- CATV high-frequency wideband low-noise amplifier
- Satellite TV tuner
- CATV amplifier
- Analog/digital cordless telephone
- Radar detector
- Wireless security alarm
- RF module
- Repeater amplifier in fiber optic transmission
Key features
- High power gain amplification
- Wideband
- Low noise
- Low leakage current
- Small junction capacitance
- Wide dynamic range
- Excellent current linearity
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