Varnitronics
DRV8353RSRGZR TI
TI

DRV8353RSRGZR

Three Phase 6V~95V MOSFET 1A 2A VQFN-48-EP(7x7) Motor Drivers, Controllers RoHS

VQFN-48-EP(7x7)ROHS3 CompliantActive

100V three-phase intelligent gate driver

Manufacturer
TI
Manufacturer part #
DRV8353RSRGZR
Store part #
C506246
Package / case
VQFN-48-EP(7x7)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

1,607 in stock

#C506246

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹763.61₹763.61
10+₹694.07₹6,940.70
30+₹652.83₹19,584.90
100+₹611.15₹61,115.00
500+₹591.94₹2,95,970.00
1,000+₹583.07₹5,83,070.00

1 × ₹763.61

₹763.61

excl. GST

₹901.06 incl. 18% GST

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  • Standard pack: 2,500 per reel

DRV8353RSRGZR

₹763.61 for 1 + GST

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Specifications

Features
Enable shutdown;Dead-time control;Interleaved conduction protection;Charge pump boost
Driven Configuration
Three Phase
Number of Channels
3
Voltage - Supply
6V~95V
Operating Temperature
-40℃~+125℃
Load Type
MOSFET
Current - Output High(IOH)
1A
Input Logic Level - High
1.5V
Current - Output Low(IOL)
2A
Supply Current (Iq)
20uA
Input Logic Level - Low
800mV

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
Moisture sensitivity
MSL 2 (1 year)
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
1.3 g

Overview

All devices in the DRV835x series are highly integrated gate drivers suitable for three-phase brushless DC (BLDC) motor application standards. These applications include field-oriented control (FOC), sinusoidal current control, and trapezoidal current control of BLDC motors. The device models offer optional integrated shunt amplifiers to support different motor control schemes and also provide a buck regulator to power the gate driver or external controller. The DRV835x reduces the number of external components typically required for MOSFET slew rate control and protection circuits by adopting an intelligent gate drive (SGD) architecture. The SGD architecture can also optimize the dead time to prevent shoot-through issues, offers flexibility in reducing electromagnetic interference (EMI) through MOSFET slew rate control technology, and can prevent gate short-circuit problems through the VGS monitor. A powerful gate pull-down circuit helps prevent unnecessary dV/dt parasitic gate turn-on events. This series of devices supports various PWM control modes (6x, 3x, 1x, and independent modes), which simplifies the connection with external controllers. These modes can reduce the number of controller outputs required for the motor driver PWM control signals. This series of devices also includes the 1x PWM mode, enabling easy sensor-based trapezoidal control of BLDC motors through an internal block commutation table.

Applications

  • Three-phase BLDC motor modules
  • Fans, blowers, and pumps
  • E-bikes, e-scooters, and electric vehicles
  • Power and garden tools, lawn mowers
  • Drones, robotics, and RC toys
  • Factory automation and textile machines

Key features

  • 9V to 100V three-phase half-bridge gate driver
  • Optional integrated buck regulator
  • Optional three low-side current shunt amplifiers
  • Smart gate drive architecture
  • Adjustable slew rate control for superior EMI performance
  • VGS handshaking and minimum dead time insertion to prevent shoot-through
  • 50mA to 1A peak source current
  • 100mA to 2A peak sink current
  • Reduced dV/dt via strong pull-down capability
  • Integrated gate driver power supplies
  • High-side charge pump for 100% PWM duty cycle control
  • Low-side linear regulator
  • Integrated LM5008A buck regulator
  • 6V to 95V operating voltage range
  • 2.5V to 75V, 350mA output capability
  • Three integrated current shunt amplifiers
  • Adjustable gain (5, 10, 20, 40 V/V)
  • Bidirectional or unidirectional support
  • 6x, 3x, 1x, and independent PWM modes
  • 120° sensored operation support
  • SPI or hardware interface
  • Low-power sleep mode (20μA at VVM = 48V)
  • Integrated protection features
  • VM undervoltage lockout (UVLO)
  • Gate drive undervoltage (GDUV)
  • MOSFET VDS overcurrent protection (OCP)
  • MOSFET shoot-through protection
  • Gate driver fault (GDF)
  • Thermal warning and thermal shutdown (OTW/OTSD)
  • Fault status indicator (nFAULT)

Alternatives

Similar parts — check the datasheet before substituting.

DRV8350RHRGZT#C2150714TI · VQFN-48-EP(7x7)₹1,080.44 · 0 in stockView

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