onsemiDatasheet (PDF)
FDPC5030SG
N-Channel Array 30V Surface Mount PQFN-8-EP(5x6)
PQFN-8-EP(5x6)ROHS3 CompliantActive
MOSFET N-CH ARR 30V PQFN-8-EP(5x6)
- Manufacturer
- onsemi
- Manufacturer part #
- FDPC5030SG
- Store part #
- C891123
- Package / case
- PQFN-8-EP(5x6)
- Category
- FET, MOSFET Arrays
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
52 in stock
#C891123
Stock & price checked 43 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹137.20 | ₹137.20 |
| 10+ | ₹109.80 | ₹1,098.00 |
| 30+ | ₹96.10 | ₹2,883.00 |
| 100+ | ₹82.62 | ₹8,262.00 |
| 500+ | ₹74.37 | ₹37,185.00 |
| 1,000+ | ₹70.22 | ₹70,220.00 |
1 × ₹137.20
₹137.20
excl. GST
₹161.90 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDPC5030SG
₹137.20 for 1 + GST
Specifications
- Reverse Transfer Capacitance (Crss)
- 42pF;72pF
- Ciss-Input Capacitance
- 1.224nF;2.73nF
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 387pF;801pF
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 17A;25A
- RDS(on)
- 5mΩ@10V
- Pd - Power Dissipation
- 23W;25W
- Type
- N-Channel
- Configuration
- Half-Bridge
- Number
- 2 N-Channel
- Gate Charge(Qg)
- 17nC@10V
- Vgs
- ±20V;±12V
- Gate Threshold Voltage (Vgs(th))
- 1V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.139 g
Overview
This device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET (Q2) have been designed to provide optimal power efficiency.
Applications
- Computing
- Communications
- General Purpose Point of Load
Key features
- Q1: N-Channel
- Max RDS(on)=5.0 mΩ at VGS=10 V, ID=17 A
- Max RDS(on)=6.5 mΩ at VGS=4.5 V, ID=14 A
- Q2: N-Channel
- Max RDS(on)=2.4 mΩ at VGS=10 V, ID=25 A
- Max RDS(on)=3.0 mΩ at VGS=4.5 V, ID=22 A
- Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
- MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing.
- RoHS Compliant
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