onsemiDatasheet (PDF)
FGA6560WDF
306W 120A 650V FS (Field Stop) TO-3PN Single IGBTs
TO-3PNRoHSActive
650V, 60A Field Stop Trench IGBT
- Manufacturer
- onsemi
- Manufacturer part #
- FGA6560WDF
- Store part #
- C444007
- Package / case
- TO-3PN
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
519 in stock
#C444007
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹409.35 | ₹409.35 |
| 10+ | ₹349.95 | ₹3,499.50 |
| 30+ | ₹273.41 | ₹8,202.30 |
| 90+ | ₹235.47 | ₹21,192.30 |
| 510+ | ₹218.33 | ₹1,11,348.30 |
| 1,200+ | ₹210.75 | ₹2,52,900.00 |
1 × ₹409.35
₹409.35
excl. GST
₹483.03 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
FGA6560WDF
₹409.35 for 1 + GST
Specifications
- Pd - Power Dissipation
- 306W
- Td(off)
- 71ns
- Td(on)
- 25.6ns
- Current - Collector(Ic)
- 120A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 31pF
- IGBT Type
- FS (Field Stop)
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 4.1V@60mA
- Operating Temperature
- -55℃~+175℃
- Vce Saturation(VCE(sat))
- 2.3V@60A,15V
- Reverse Recovery Time(trr)
- 110ns
- Switching Energy(Eoff)
- 520uJ
- Turn-On Energy (Eon)
- 2.46mJ
- Input Capacitance(Cies)
- 2.419nF
- Gate Charge(Qg)
- 84nC@15V
- Output Capacitance(Coes)
- 82pF
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6.853 g
Same category
More in Single IGBTs
onsemi
HGTD1N120BNS9AIGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
From
₹151.17
18,103 in stock
Hangzhou Silan Microelectronics
SGT50T65FD1PN235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
From
₹176.06
14,296 in stock
