HXY MOSFETDatasheet (PDF)
FGH40T65SQD-F155-HXY
IGBT 650V 70A 250W Through Hole TO-247
TO-247ROHS CompliantSold out at source
IGBT 650V 70A TO-247
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- FGH40T65SQD-F155-HXY
- Store part #
- C49003409
- Package / case
- TO-247
- Category
- Single IGBTs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C49003409
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹550.46 | ₹550.46 |
| 10+ | ₹492.86 | ₹4,928.60 |
| 30+ | ₹458.68 | ₹13,760.40 |
| 90+ | ₹424.07 | ₹38,166.30 |
| 510+ | ₹408.17 | ₹2,08,166.70 |
| 990+ | ₹400.87 | ₹3,96,861.30 |
1 × ₹550.46
₹550.46
excl. GST
₹649.54 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
FGH40T65SQD-F155-HXY
₹550.46 for 1 + GST
Specifications
- Pd - Power Dissipation
- 250W
- Td(off)
- 136ns
- Td(on)
- 26ns
- Current - Collector(Ic)
- 70A
- Collector-Emitter Breakdown Voltage (Vces)
- 650V
- Reverse Transfer Capacitance (Cres)
- 11pF
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 3.2V@250uA
- Operating Temperature
- -40℃~+175℃
- Vce Saturation(VCE(sat))
- 2.1V@40A,15V
- Reverse Recovery Time(trr)
- 56ns
- Switching Energy(Eoff)
- 430uJ
- Turn-On Energy (Eon)
- 900uJ
- Input Capacitance(Cies)
- 1.52nF@25V
- Output Capacitance(Coes)
- 110pF
- Gate Charge(Qg)
- 57nC@15V
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Sold out at source
- Moisture sensitivity
- MSL 3 (168 hours)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.87 g
Same category
More in Single IGBTs
onsemi
HGTD1N120BNS9AIGBT NPT (Non-Punch Through) 1.2kV 5.3A 60W Surface Mount TO-252AA
From
₹151.17
18,103 in stock
Hangzhou Silan Microelectronics
SGT50T65FD1PN235W 100A 650V FS (Field Stop) TO-3P-3 Single IGBTs
From
₹176.06
14,296 in stock
