IDK10G65C5XTMA2
1 Independent 650V 1.8V@10A 10A TO-263 Single Diodes RoHS
650V SiC Schottky Diode
- Manufacturer
- Infineon
- Manufacturer part #
- IDK10G65C5XTMA2
- Store part #
- C3759094
- Package / case
- TO-263
- Category
- Single Diodes
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
19 in stock
#C3759094
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹851.40 | ₹851.40 |
| 30+ | ₹851.20 | ₹25,536.00 |
1 × ₹851.40
₹851.40
excl. GST
₹1,004.65 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 1,000 per reel
IDK10G65C5XTMA2
₹851.40 for 1 + GST
Specifications
- Diode Configuration
- 1 Independent
- Operating Junction Temperature Range
- -55℃~+175℃
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Voltage - Forward(Vf@If)
- 1.8V@10A
- Reverse Leakage Current (Ir)
- 180uA@650V
- Non-Repetitive Peak Forward Surge Current
- 82A
- Current - Rectified
- 10A
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 1,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.61 g
Overview
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc×Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Applications
- Switch mode power supply
- Power factor correction
- Solar inverter
- Uninterruptible power supply
Key features
- Revolutionary semiconductor material - Silicon Carbide
- Benchmark switching behavior
- No reverse recovery/ No forward recovery
- Temperature independent switching behavior
- High surge current capability
- Pb-free lead plating; RoHS compliant
- Qualified according to JEDEC1) for target applications
- Breakdown voltage tested at 22 mA²
- Optimized for high temperature operation
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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