
NCEDatasheet (PDF)
NCE01P13K
P-Channel 100V 13A 40W Surface Mount TO-252-2L
TO-252-2LRoHSActive
MOSFET P-CH 100V 13A TO-252-2L
- Manufacturer
- NCE
- Manufacturer part #
- NCE01P13K
- Store part #
- C115989
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
789 in stock
#C115989
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹66.04 | ₹66.04 |
| 10+ | ₹50.74 | ₹507.40 |
| 30+ | ₹44.17 | ₹1,325.10 |
| 100+ | ₹36.08 | ₹3,608.00 |
| 500+ | ₹32.36 | ₹16,180.00 |
| 1,000+ | ₹30.18 | ₹30,180.00 |
1 × ₹66.04
₹66.04
excl. GST
₹77.93 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
NCE01P13K
₹66.04 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 260pF
- Ciss-Input Capacitance
- 760pF
- Pd - Power Dissipation
- 40W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 13A
- Reverse Transfer Capacitance (Crss)
- 170pF
- RDS(on)
- 200mΩ@10V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 25nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.608 g
Overview
The NCE01P13K utilizes advanced trench technology and design to deliver excellent on-resistance RDS(ON) with low gate charge. It is suitable for a wide range of applications and features ESD protection.
Applications
- Power switching
- DC/DC converters
Key features
- Drain-source voltage V<sub>DS</sub> = -100V, drain current I<sub>D</sub> = -13A
- At gate-source voltage V<sub>GS</sub> = -10V, on-resistance R<sub>DS(ON)</sub> < 200mΩ (typical: 170mΩ)
- Ultra-high density cell design
- Advanced trench process technology
- Reliable and durable
- High-density cell design for ultra-low on-resistance
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