onsemiDatasheet (PDF)
NTMFD1D6N03P8
30V 109A 29W 5mΩ@10V PQFN-8(5x6) FET, MOSFET Arrays RoHS
PQFN-8(5x6)ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- NTMFD1D6N03P8
- Store part #
- C20047225
- Package / case
- PQFN-8(5x6)
- Category
- FET, MOSFET Arrays
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
30 in stock
#C20047225
Stock & price checked 29 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹346.55 | ₹346.55 |
| 10+ | ₹338.12 | ₹3,381.20 |
| 30+ | ₹332.28 | ₹9,968.40 |
| 100+ | ₹326.66 | ₹32,666.00 |
1 × ₹346.55
₹346.55
excl. GST
₹408.93 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
NTMFD1D6N03P8
₹346.55 for 1 + GST
Specifications
- Drain to Source Voltage
- 30V
- Current - Continuous Drain(Id)
- 109A
- Reverse Transfer Capacitance (Crss)
- 115pF
- Pd - Power Dissipation
- 29W
- RDS(on)
- 5mΩ@10V
- Ciss-Input Capacitance
- 6.43nF
- Type
- N-Channel
- Gate Charge(Qg)
- 87nC@10V
- Operating Temperature
- -55℃~+150℃
- Gate Threshold Voltage (Vgs(th))
- 3V
- Output Capacitance(Coss)
- 1.695nF
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.463 g
Overview
This device integrates two dedicated N-channel MOSFETs in a dual package. The switching nodes are internally connected to simplify layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous rectifier MOSFET (Q2) are designed for optimal power efficiency.
Applications
- Computing
- Communications
- General point-of-load applications
Key features
- Q1: N-channel
- Maximum rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
- Maximum rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A
- Q2: N-channel
- Maximum rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A
- Maximum rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A
- Low-inductance package for reduced rise/fall times and lower switching losses
- Integrated MOSFETs for optimized layout, reduced circuit inductance, and minimized switching node ringing
- Lead-free, halogen-free/brominated flame retardant-free, and RoHS compliant
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