Nexperia

PBSS4032NZ,115

Bipolar (BJT) Transistor NPN 30V 4.9A 145MHz Surface Mount SOT-223

SOT-223ROHS3 CompliantActive

TRANS NPN 30V 4.9A SOT-223

Manufacturer: Nexperia
Manufacturer part #: PBSS4032NZ,115
Store part #: C551876
Package / case: SOT-223
Category: Single Bipolar Transistors
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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100% Authentic · 30-Day Return or Replacement · policy

3,000 in stock

#C551876

Stock & price checked 9 days ago

Quantity	Unit price	Pack price
1+	₹93.66	₹93.66
10+	₹75.85	₹758.50
30+	₹67.16	₹2,014.80
100+	₹58.24	₹5,824.00
500+	₹53.03	₹26,515.00
1,000+	₹50.42	₹50,420.00

Quantity (min 1)

1 × ₹93.66

₹93.66

excl. GST

₹110.52 incl. 18% GST

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Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 1,000 per reel

PBSS4032NZ,115

₹93.66 for 1 + GST

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Specifications

Operating Temperature: -55℃~+150℃
Current - Collector Cutoff: 100nA
Transition frequency(fT): 145MHz
Collector - Emitter Voltage VCEO: 30V
Emitter-Base Voltage VEBO: 5V
DC Current Gain: 250
Pd - Power Dissipation: 2W
Current - Collector(Ic): 4.9A
Number: 1 NPN
type: NPN
Vce Saturation(VCE(sat)): 240mV

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 0.174 g

Overview

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4032PZ.

Applications

DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits

Key features

Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Alternatives

Similar parts — check the datasheet before substituting.

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