STPSC10C065RY

1 Independent 650V 1.75V@10A 10A I2PAK Single Diodes RoHS

I2PAKROHS3 CompliantDiscontinued

650V power Schottky silicon carbide diode

Manufacturer: ST
Manufacturer part #: STPSC10C065RY
Store part #: C5268285
Package / case: I2PAK
Category: Single Diodes
Packaging: Tube-packed

Datasheet (PDF)

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20 in stock

#C5268285

Stock & price checked 6 days ago

Quantity	Unit price	Pack price
1+	₹727.54	₹727.54
10+	₹616.56	₹6,165.60
50+	₹550.65	₹27,532.50
100+	₹483.89	₹48,389.00
500+	₹453.18	₹2,26,590.00
1,000+	₹439.24	₹4,39,240.00

Quantity (min 1)

1 × ₹727.54

₹727.54

excl. GST

₹858.50 incl. 18% GST

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Standard pack: 50 per tube

STPSC10C065RY

₹727.54 for 1 + GST

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Specifications

Diode Configuration: 1 Independent
Operating Junction Temperature Range: -40℃~+175℃
Voltage - DC Reverse (Vr) (Max): 650V
Voltage - Forward(Vf@If): 1.75V@10A
Reverse Leakage Current (Ir): 100uA@650V
Non-Repetitive Peak Forward Surge Current: 85A
Current - Rectified: 10A

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Discontinued
ECCN: EAR99
Packaging: Tube-packed
Standard pack: 50 / Tube
Sold per: Piece
Minimum order: 1
Unit weight: 3.03 g

Overview

The SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC10C065-Y will boost performance in hard switching conditions.