STPSC12065G2Y-TR

650V 1.45V@12A 12A D2PAKHV Single Diodes RoHS

D2PAKHVROHS3 CompliantActive

Manufacturer: ST
Manufacturer part #: STPSC12065G2Y-TR
Store part #: C2970860
Package / case: D2PAKHV
Category: Single Diodes
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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30 in stock

#C2970860

Stock & price checked 7 days ago

Quantity	Unit price	Pack price
1+	₹1,069.22	₹1,069.22
10+	₹921.13	₹9,211.30
30+	₹830.72	₹24,921.60
100+	₹755.06	₹75,506.00
500+	₹745.23	₹3,72,615.00

Quantity (min 1)

1 × ₹1,069.22

₹1,069.22

excl. GST

₹1,261.68 incl. 18% GST

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GST invoice with every order
Standard pack: 1,000 per reel

STPSC12065G2Y-TR

₹1,069.22 for 1 + GST

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Specifications

Operating Junction Temperature Range: -40℃~+175℃
Voltage - DC Reverse (Vr) (Max): 650V
Voltage - Forward(Vf@If): 1.45V@12A
Reverse Leakage Current (Ir): 150uA@650V
Non-Repetitive Peak Forward Surge Current: 50A
Current - Rectified: 12A

Packaging & compliance

RoHS: ROHS3 Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 1.72 g

Overview

SiC diodes are high-performance power Schottky diodes fabricated on silicon carbide substrates. The wide bandgap material enables Schottky diode structures rated at 650V. Due to the Schottky structure, there is no recovery phenomenon at turn-off and ringing is negligible. The minimal capacitive turn-off behavior is temperature-independent. Particularly suited for PFC applications, the STPSC12065-Y delivers enhanced performance under hard-switching conditions. Its high forward surge capability ensures robust performance during transient phases.