STPSC20H12G2Y-TR

1.2kV 1.5V@20A 20A D2PAKHV Single Diodes RoHS

D2PAKHVROHS CompliantActive

Manufacturer: ST
Manufacturer part #: STPSC20H12G2Y-TR
Store part #: C5268289
Package / case: D2PAKHV
Category: Single Diodes
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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14 in stock

#C5268289

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
1+	₹1,779.40	₹1,779.40
10+	₹1,723.02	₹17,230.20

Quantity (min 1)

1 × ₹1,779.40

₹1,779.40

excl. GST

₹2,099.69 incl. 18% GST

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Standard pack: 1,000 per reel

STPSC20H12G2Y-TR

₹1,779.40 for 1 + GST

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Specifications

Operating Junction Temperature Range: -40℃~+175℃
Voltage - DC Reverse (Vr) (Max): 1.2kV
Voltage - Forward(Vf@If): 1.5V@20A
Reverse Leakage Current (Ir): 120uA@1200V
Non-Repetitive Peak Forward Surge Current: 140A
Current - Rectified: 20A

Packaging & compliance

RoHS: ROHS Compliant
Lifecycle: Active
ECCN: EAR99
Packaging: Tape & Reel (TR)
Standard pack: 1,000 / Reel
Sold per: Piece
Minimum order: 1
Unit weight: 1.813 g

Overview

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.