Varnitronics
STTH1506DPI ST
ST

STTH1506DPI

Diode Independent 600V 15A Through Hole DOP-3I

DOP-3IROHS3 CompliantActive

DIODE STANDARD 600V 15A DOP-3I

Manufacturer
ST
Manufacturer part #
STTH1506DPI
Store part #
C513088
Package / case
DOP-3I
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

612 in stock

#C513088

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹453.68₹453.68
10+₹384.49₹3,844.90
30+₹343.36₹10,300.80
90+₹301.80₹27,162.00
510+₹282.43₹1,44,039.30
1,200+₹273.95₹3,28,740.00

1 × ₹453.68

₹453.68

excl. GST

₹535.34 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 30 per tube

STTH1506DPI

₹453.68 for 1 + GST

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Specifications

Voltage - DC Reverse (Vr) (Max)
600V
Diode Configuration
Standalone
Voltage - Forward(Vf@If)
3.6V@15A
Reverse Leakage Current (Ir)
20uA@600V
Non-Repetitive Peak Forward Surge Current
130A
Current - Rectified
15A

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
30 / Tube
Sold per
Piece
Minimum order
1
Unit weight
4.5 g

Overview

TURBOSWITCH "H" is a high-performance diode composed of two 300V dies connected in series. The TURBOSWITCH "H" series significantly reduces the losses of associated MOSFETs during high dI/F/dt operation.

Applications

  • Continuous mode power factor corrector
  • Boost diode under hard-switching conditions

Key features

  • Ideal as boost diode for continuous mode PFC and hard-switching applications, designed for high dI/dt operation
  • Fast recovery current competitive with SiC devices
  • Enables MOSFET and heatsink miniaturization
  • Internally ceramic-isolated device with two 300V diodes under identical thermal conditions
  • Isolation (2500VRMS) allows mounting on the same heatsink as the MOSFET, with flexibility for common or separate heatsink cooling
  • Static and dynamic balance of internal diodes guaranteed by design
  • Package capacitance: C=16pF
  • Pulse test: tp=100ms δ<2%; tp=380us δ<2%
  • Maximum conduction loss estimation formula: P=1.7×I_F(AV)+0.047×I_F²(RMS)
  • Epoxy meets UL94 V0 standard

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