TC6320K6-G
N-Channel+P-Channel Array 200V Surface Mount DFN-8-EP(4x4)
MOSFET N-CH+P-CH ARR 200V DFN-8-EP(4x4)
- Manufacturer
- MICROCHIP
- Manufacturer part #
- TC6320K6-G
- Store part #
- C624991
- Package / case
- DFN-8-EP(4x4)
- Category
- FET, MOSFET Arrays
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
50 in stock
#C624991
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹398.51 | ₹398.51 |
| 10+ | ₹339.65 | ₹3,396.50 |
| 30+ | ₹304.78 | ₹9,143.40 |
| 100+ | ₹269.46 | ₹26,946.00 |
| 500+ | ₹253.10 | ₹1,26,550.00 |
| 1,000+ | ₹245.92 | ₹2,45,920.00 |
1 × ₹398.51
₹398.51
excl. GST
₹470.24 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,300 per reel
TC6320K6-G
₹398.51 for 1 + GST
Specifications
- Reverse Transfer Capacitance (Crss)
- 23pF;30pF
- Ciss-Input Capacitance
- 110pF;200pF
- Operating Temperature
- -55℃~+150℃
- Output Capacitance(Coss)
- 60pF;55pF
- Drain to Source Voltage
- 200V
- Current - Continuous Drain(Id)
- 2A
- RDS(on)
- 7Ω@10V;8Ω@10V
- Type
- N-Channel + P-Channel
- Number
- 1 N-Channel + 1 P-Channel
- Gate Threshold Voltage (Vgs(th))
- 1V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,300 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.38 g
Overview
The TC6320 consists of high-voltage, low-threshold N-channel and P-channel MOSFETs in 8-lead SOIC and DFN packages. Both MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high-voltage pulser applications. It is a complimentary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Microchip’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Applications
- High-voltage Pulsers
- Amplifiers
- Buffers
- Piezoelectric Transducer Drivers
- General Purpose Line Drivers
- Logic-level Interfaces
Key features
- Integrated Gate-to-source Resistor
- Integrated Gate-to-source Zener Diode
- Low Threshold
- Low On-resistance
- Low Input Capacitance
- Fast Switching Speeds
- Free from Secondary Breakdown
- Low Input and Output Leakage
- Independent Electrically Isolated N-channel and P-channel
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