MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
2SK1151L-VB
650V 2A 45W 4Ω@10V 1 N-channel N-Channel TO-251 Single FETs, MOSFETs
TO-251RoHSActive
MOSFET N-CH 650V 2A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- 2SK1151L-VB
- Store part #
- C19190250
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
20 in stock
#C19190250
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹78.88 | ₹78.88 |
| 10+ | ₹63.62 | ₹636.20 |
| 30+ | ₹56.96 | ₹1,708.80 |
| 80+ | ₹44.06 | ₹3,524.80 |
| 480+ | ₹40.40 | ₹19,392.00 |
| 960+ | ₹38.26 | ₹36,729.60 |
1 × ₹78.88
₹78.88
excl. GST
₹93.08 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
2SK1151L-VB
₹78.88 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 650V
- Output Capacitance(Coss)
- 45pF
- Current - Continuous Drain(Id)
- 2A
- Ciss-Input Capacitance
- 417pF
- Pd - Power Dissipation
- 45W
- Reverse Transfer Capacitance (Crss)
- 5pF
- RDS(on)
- 4Ω@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 11nC@10V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.34 g
Overview
Key features
- Low gate charge Qg, simple drive requirements
- Improved gate, avalanche, and dynamic dV/dt robustness
- Fully characterized capacitance, avalanche voltage, and current
- Compliant with RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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