MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
VBsemi ElecDatasheet (PDF)
50N06-VB TO220
N-Channel 60V 60A 136W Through Hole TO-220AB
TO-220ABRoHSActive
MOSFET N-CH 60V 60A TO-220AB
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- 50N06-VB TO220
- Store part #
- C22389010
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C22389010
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹107.14 | ₹107.14 |
| 10+ | ₹87.17 | ₹871.70 |
| 50+ | ₹77.09 | ₹3,854.50 |
| 100+ | ₹67.22 | ₹6,722.00 |
| 500+ | ₹61.14 | ₹30,570.00 |
| 1,000+ | ₹58.19 | ₹58,190.00 |
1 × ₹107.14
₹107.14
excl. GST
₹126.43 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
50N06-VB TO220
₹107.14 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 60A
- Output Capacitance(Coss)
- 570pF
- Ciss-Input Capacitance
- 4.2nF
- Pd - Power Dissipation
- 136W
- Reverse Transfer Capacitance (Crss)
- 325pF
- RDS(on)
- 11mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 47nC@10V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.2 g
Overview
The TP5335 is a low-threshold, enhancement-mode (normally-off) transistor utilizing an advanced vertical double-diffused metal-oxide-semiconductor (DMOS) structure combined with a proven silicon-gate manufacturing process. This combination gives the device both the power handling capability of bipolar transistors and the high input impedance and positive temperature coefficient characteristics inherent to MOS devices. As with all MOS structures, this device is immune to thermal runaway and thermally induced secondary breakdown. Microchip's vertical DMOS FETs are ideally suited for a wide range of switching and amplification applications requiring high breakdown voltage, high input impedance, low input capacitance, and fast switching speed.
Applications
- Logic level interface (TTL and CMOS compatible) - Solid state relay - Analog switch - Power management - Telecom switch
Key features
- Junction temperature 175 °C
- Trench power MOSFET
- Material classification: RoHS compliant
- N-channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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