ADA4077-1BRZ

The single ADA4077-1, dual ADA4077-2, and quad ADA4077-4 amplifiers feature extremely low offset voltage and drift, and low input bias current, noise, and power consumption. Outputs are stable with capacitive loads of more than 1000 pF with no external compensation. Applications for this amplifier include sensor signal conditioning (such as thermocouples, resistance temperature detectors (RTDs), strain gages), process control front-end amplifiers, and precision diode power measurement in optical and wireless transmission systems. The ADA4077-1/ADA4077-2/ADA4077-4 are useful in line powered and portable instrumentation, precision filters, and voltage or current measurement and level setting. Unlike other amplifiers, the ADA4077-1/ADA4077-2/ ADA4077-4 have an MSL1 rating that is compliant with the most stringent of assembly processes, and they are specified over the extended industrial temperature range from -40°C to +125°C for the most demanding operating environments.

Applications

• Process control front-end amplifiers
• Optical network control circuits
• Instrumentation
• Precision sensors and controls
• Precision filters

Key features

• Offset voltage: 25 μV maximum at 25°C (B grade, 8-lead SOIC, single/ dual)
• Offset voltage: 50 μV maximum at 25°C (A grade, 8-lead SOIC, single/ dual)
• Offset voltage: 50 μV maximum at 25°C (A grade, 14-lead SOIC, quad)
• Offset voltage drift: 0.25 μV/°C maximum (B grade, 8-lead SOIC, single/dual)
• Offset voltage drift: 0.55 μV/°C maximum (A grade, 8-lead SOIC, single/dual)
• Offset voltage drift: 0.75 μV/°C maximum (A grade, 14-lead SOIC, quad)
• MSL1 rated
• Low input bias current: 1 nA maximum at TA = 25°C
• Low voltage noise density: 6.9 nV/√Hz typical at f = 1000 Hz
• CMRR, PSRR, and Δv > 120 dB minimum
• Low supply current: 400 μA per amplifier typical
• Wide gain bandwidth product: 3.9 MHz at ±5 V
• Dual-supply operation: Specified at ±5 V to ±15 V, Operates at ±2.5 V to ±15 V
• Unity gain stable
• No phase reversal
• Long-term offset voltage drift (10,000 hours): 0.5 μV typical
• Temperature hysteresis: 1 μV typical