MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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InfineonDatasheet (PDF)
AIMW120R035M1HXKSA1
N-Channel 1.2kV 52A 228W Through Hole TO-247-3-41
TO-247-3-41ROHS3 CompliantActive
1200V SiC Trench MOSFET
- Manufacturer
- Infineon
- Manufacturer part #
- AIMW120R035M1HXKSA1
- Store part #
- C3289085
- Package / case
- TO-247-3-41
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C3289085
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹5,481.04 | ₹5,481.04 |
| 30+ | ₹5,227.17 | ₹1,56,815.10 |
1 × ₹5,481.04
₹5,481.04
excl. GST
₹6,467.63 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
AIMW120R035M1HXKSA1
₹5,481.04 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 107pF
- Current - Continuous Drain(Id)
- 52A
- Ciss-Input Capacitance
- 2.13nF
- Pd - Power Dissipation
- 228W
- Reverse Transfer Capacitance (Crss)
- 11pF
- RDS(on)
- 35mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 59nC
- Gate Threshold Voltage (Vgs(th))
- 5.7V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 6 g
Overview
Applications
- On-board Charger/PFC Booster/DC-DC Converter
Key features
- Revolutionary semiconductor material - Silicon Carbide
- Very low switching losses
- Threshold-free on state characteristic
- IGBT-compatible driving voltage (18V for turn-on)
- 0V turn-off gate voltage
- Benchmark gate threshold voltage, VGS(th)=4.5V
- Fully controllable dv/dt
- Commutation robust body diode, ready for synchronous rectification
- Temperature independent turn-off switching losses
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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