AIMZH120R040M1TXKSA1

1.2kV 55A 268W 50mΩ 1 N-channel N-Channel TO-247-4 Single FETs, MOSFETs RoHS

TO-247-4ROHS CompliantActive

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100% Authentic · 30-Day Return or Replacement · policy

5 in stock

#C22408452

Stock & price checked 37 h ago

Quantity (min 1)

1 × ₹1,982.04

₹1,982.04

excl. GST

₹2,338.81 incl. 18% GST

AIMZH120R040M1TXKSA1

₹1,982.04 for 1 + GST

Specifications

This product is a 1200 V SiC trench MOSFET based on CoolSiC™ technology. Its pin definitions include Drain, Source, Kelvin sense contact, and Gate.

V_DSS = 1200 V, T_vj = -55...175°C
I_DDC = 55 A, T_C = 25°C
R_DS(on) = 40 mΩ, V_GS = 20 V, T_vj = 25°C
Next-generation chip technology with performance optimization (Gen1p) — improved R_DSon × A figure of merit
Enhanced recommended turn-on voltage (V_GS(on) = 20 V) for lower R_DS(on)
Best-in-class switching energy — reduced switching losses and cooling requirements
Lowest device capacitance for higher switching speed and power density
Low C_rss/C_iss ratio combined with high V_GS(th) — prevents parasitic turn-on and supports unipolar gate drive
Reduced total gate charge Q_Gtot — lower gate drive power and losses
.XT die attach technology for best-in-class thermal performance
Sense pin for optimized switching performance
Suitable for high-voltage creepage distance requirements

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