MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
MSKSEMIDatasheet (PDF)
AO4612-MS
N-Channel+P-Channel 60V 5A 1.5W Surface Mount SOP-8
SOP-8RoHSActive
MOSFET N-CH+P-CH ARR 60V 5A SOP-8
- Manufacturer
- MSKSEMI
- Manufacturer part #
- AO4612-MS
- Store part #
- C3008145
- Package / case
- SOP-8
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
760 in stock
#C3008145
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹26.62 | ₹133.10 |
| 50+ | ₹20.94 | ₹1,047.00 |
| 150+ | ₹18.51 | ₹2,776.50 |
| 500+ | ₹15.47 | ₹7,735.00 |
| 3,000+ | ₹13.44 | ₹40,320.00 |
| 6,000+ | ₹12.63 | ₹75,780.00 |
5 × ₹26.62
₹133.10
excl. GST
₹157.06 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
AO4612-MS
₹133.10 for 5 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V;60V
- Output Capacitance(Coss)
- 148pF;51pF
- Current - Continuous Drain(Id)
- 5A;4A
- Ciss-Input Capacitance
- 695pF;715pF
- Pd - Power Dissipation
- 1.5W;1.5W
- Reverse Transfer Capacitance (Crss)
- 7pF;34pF
- RDS(on)
- 60mΩ@10V;100mΩ@10V
- Number
- 1 N-Channel + 1 P-Channel
- Gate Charge(Qg)
- 5.5nC@10V;5.9nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1.2V
- Type
- N-Channel + P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.154 g
Overview
The AO4612-MS is a high-performance complementary N-channel and P-channel MOSFET with high cell density, delivering excellent on-resistance (RDSON) and gate charge for most synchronous buck converter applications. The AO4612-MS complies with RoHS and green product requirements, with 100% guaranteed EAS through full-function reliability qualification. Ultra-low gate charge 100% guaranteed EAS - Green and environmentally friendly device Superior CdV/dt immunity Advanced high cell density trench technology
Key features
- Drain-source voltage (V<sub>DS</sub>) = -30 V
- Drain current (I<sub>D</sub>) = -15 A (V<sub>GS</sub> = 10 V)
- On-resistance R<sub>DS(ON)</sub> < 7.50 mΩ (V<sub>GS</sub> = -10 V)
- On-resistance R<sub>DS(ON)</sub> < 12 mΩ (V<sub>GS</sub> = -4.5 V)
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