MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
AP9575GJ-HF-VB
P-Channel 60V 20A 3W Through Hole TO-251
TO-251RoHSActive
MOSFET P-CH 60V 20A TO-251
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- AP9575GJ-HF-VB
- Store part #
- C5456482
- Package / case
- TO-251
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
6 in stock
#C5456482
Stock & price checked 8 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹67.22 | ₹67.22 |
| 10+ | ₹53.14 | ₹531.40 |
| 30+ | ₹47.27 | ₹1,418.10 |
| 80+ | ₹39.70 | ₹3,176.00 |
| 480+ | ₹36.34 | ₹17,443.20 |
| 960+ | ₹34.24 | ₹32,870.40 |
1 × ₹67.22
₹67.22
excl. GST
₹79.32 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 80 per tube
AP9575GJ-HF-VB
₹67.22 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 60V
- Output Capacitance(Coss)
- 200pF
- Current - Continuous Drain(Id)
- 20A
- Ciss-Input Capacitance
- 1.2nF
- Pd - Power Dissipation
- 3W
- Reverse Transfer Capacitance (Crss)
- 150pF
- RDS(on)
- 66mΩ@10V;80mΩ@4.5V
- Number
- 1 P-Channel
- Gate Charge(Qg)
- 40nC@10V;38nC@4.5V
- Gate Threshold Voltage (Vgs(th))
- 1V
- Type
- P-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 80 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.1 g
Overview
GSW77N65E is a low-voltage N-channel multi-epitaxial superjunction power MOSFET sample featuring advanced technology with superior characteristics, including fast switching times, low input capacitance (Ciss) and reverse transfer capacitance (Crss), low on-resistance, and excellent avalanche performance.
Applications
- Load Switch
Key features
- Trench power MOSFET
- 100% tested for unclamped inductive switching (UIS)
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