MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock

2W 55V 4.7A 50mΩ@10V 1 N-Channel + 1 P-Channel N-Channel + P-Channel SO-8 Single FETs, MOSFETs RoHS
MOSFET N/P-CH 55V 4.7A SO-8
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100% Authentic · 30-Day Return or Replacement · policy
39 in stock
#C533280
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹360.50 | ₹360.50 |
| 10+ | ₹305.96 | ₹3,059.60 |
| 30+ | ₹271.85 | ₹8,155.50 |
| 100+ | ₹236.86 | ₹23,686.00 |
| 500+ | ₹220.99 | ₹1,10,495.00 |
| 1,000+ | ₹214.26 | ₹2,14,260.00 |
1 × ₹360.50
₹360.50
excl. GST
₹425.39 incl. 18% GST
AUIRF7343QTR
₹360.50 for 1 + GST
These HEXFET power MOSFETs in a dual SO-8 package are designed for automotive applications, utilizing the latest processing technology to achieve extremely low on-resistance per unit silicon area. Additional features of these automotive-qualified HEXFET power MOSFETs include a 150°C junction operating temperature, fast switching speed, and higher repetitive avalanche ratings. The combination of these advantages makes this design a highly efficient and reliable device suitable for automotive applications and a wide variety of other applications. The efficient SO-8 package offers excellent thermal characteristics and dual MOSFET die capability, making it ideal for a wide range of power applications. This dual SMT SO-8 package provides significant board space savings and is also available in tape-and-reel packaging.
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Same category
MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock