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InfineonDatasheet (PDF)
AUIRF7669L2TR
100V 4.4mΩ@10V 1 N-channel N-Channel DirectFET Single FETs, MOSFETs RoHS
DirectFETROHS3 CompliantActive
- Manufacturer
- Infineon
- Manufacturer part #
- AUIRF7669L2TR
- Store part #
- C533287
- Package / case
- DirectFET
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C533287
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹1,287.56 | ₹1,287.56 |
| 10+ | ₹1,257.21 | ₹12,572.10 |
| 30+ | ₹1,236.77 | ₹37,103.10 |
| 100+ | ₹1,216.54 | ₹1,21,654.00 |
1 × ₹1,287.56
₹1,287.56
excl. GST
₹1,519.32 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,000 per reel
AUIRF7669L2TR
₹1,287.56 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.14nF
- Ciss-Input Capacitance
- 5.66nF
- Pd - Power Dissipation
- 3.3W;100W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 19A;114A
- Reverse Transfer Capacitance (Crss)
- 240pF
- RDS(on)
- 4.4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 120nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.92 g
Overview
The AUIRF7669L2TR combines the latest automotive HEXFET® power MOSFET silicon technology with the advanced DirectFET™ package, delivering the lowest on-resistance in a package with DPak (TO-252AA) footprint and only 0.7 mm profile. When the fabrication methods and processes described in Application Note AN-1035 are followed, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling to maximize thermal transfer efficiency in automotive power systems. This HEXFET® power MOSFET is designed for applications demanding high efficiency and power density. The advanced DirectFET package platform combined with the latest silicon technology enables the AUIRF7669L2TR to deliver significant system cost savings and performance improvements, making it particularly suitable for motor drive, high-frequency DC-DC, and other heavy-load applications on internal combustion engine (ICE), hybrid electric vehicle (HEV), and electric vehicle (EV) platforms. This MOSFET employs the latest processing technology to achieve low on-resistance and low gate charge (Qg) per unit silicon area. Additional features include a 175°C operating junction temperature and high repetitive peak current capability. These characteristics make this MOSFET a highly efficient, robust, and reliable device for high-current automotive applications.
Applications
- Motor drives
- High-frequency DC-DC
- Other heavy-load applications on ICE, HEV, and EV platforms
Key features
- Optimized for automotive motor drive, DC-DC, and other heavy-load applications
- Ultra-small package footprint with low profile
- High power density
- Low parasitic parameters
- Dual-side heat dissipation
- 175°C operating temperature
- Repetitive avalanche capability, robust and reliable
- Lead-free, RoHS compliant, and halogen-free
- Automotive-grade certified
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | AUIRF7769L2TR#C533297Infineon · DirectFET | Infineon | DirectFET | 11 | ₹1,676.51 · 11 in stock | View |
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