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InfineonDatasheet (PDF)
AUIRF7675M2TR
N-Channel 150V 18A 45W DirectFET
DirectFETROHS3 CompliantActive
MOSFET N-CH 150V 18A DirectFET
- Manufacturer
- Infineon
- Manufacturer part #
- AUIRF7675M2TR
- Store part #
- C533288
- Package / case
- DirectFET
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
7 in stock
#C533288
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹479.76 | ₹479.76 |
| 10+ | ₹469.31 | ₹4,693.10 |
| 30+ | ₹462.34 | ₹13,870.20 |
| 100+ | ₹455.38 | ₹45,538.00 |
1 × ₹479.76
₹479.76
excl. GST
₹566.12 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 4,800 per reel
AUIRF7675M2TR
₹479.76 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 190pF
- Ciss-Input Capacitance
- 1.36nF
- Pd - Power Dissipation
- 45W
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 150V
- Current - Continuous Drain(Id)
- 18A
- Reverse Transfer Capacitance (Crss)
- 41pF
- RDS(on)
- 47mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 21nC@75V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 4,800 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.42 g
Overview
AUIRF7675M2TR/TR1 combines the latest automotive HEXFET power MOSFET silicon technology with the advanced DirectFET package platform, delivering a best-in-class solution for automotive Class D audio amplifier applications. When following the manufacturing methods and process guidelines outlined in Application Note AN-1035, the DirectFET package is compatible with existing layout geometries, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques used in power applications. The DirectFET package supports dual-side cooling, maximizing thermal transfer efficiency in automotive power systems. This HEXFET power MOSFET is optimized for gate charge, body diode reverse recovery, and internal gate resistance to improve key performance metrics in Class D audio amplifiers, such as efficiency, total harmonic distortion (THD), and EMI. Furthermore, compared to conventional wire-bond SOIC packages, the DirectFET package platform offers lower parasitic inductance and resistance, improving EMI performance by reducing voltage ringing associated with current transients. These characteristics make this MOSFET a highly attractive component for automotive Class D audio amplifier systems.
Applications
- Automotive Class-D audio amplifier applications
Key features
- Optimized for Class-D audio amplifier applications
- Low on-resistance RDS(ON) for improved efficiency
- Low gate charge Qg for improved THD and efficiency
- Low reverse recovery charge Qrr for improved THD and reduced EMI
- Low parasitic inductance for reduced ringing and EMI
- Heatsink-free operation, up to 250W per channel into 4Ω load
- Dual-side cooling
- Operating temperature up to 175°C
- Repetitive avalanche capability for robustness and reliability
- Lead-free, RoHS compliant, and halogen-free
- Automotive-qualified
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