Varnitronics
BSS84AHZGT116 ROHM
ROHM

BSS84AHZGT116

60V 230mA 200mW 5.3Ω@10V 1 P-Channel P-Channel TO-236-3(SOT-23-3) Single FETs, MOSFETs RoHS

TO-236-3(SOT-23-3)ROHS3 CompliantActive
Manufacturer
ROHM
Manufacturer part #
BSS84AHZGT116
Store part #
C3280334
Package / case
TO-236-3(SOT-23-3)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

Out of stock

#C3280334

Stock & price checked 4 days ago

QuantityUnit pricePack price
5+₹6.75₹33.75
50+₹6.62₹331.00
150+₹6.51₹976.50
500+₹6.42₹3,210.00
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  • GST invoice with every order
  • Standard pack: 3,000 per reel
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Specifications

Configuration
Standalone
Drain to Source Voltage
60V
Operating Temperature
-55℃~+150℃
Output Capacitance(Coss)
5pF
Current - Continuous Drain(Id)
230mA
Ciss-Input Capacitance
34pF
Pd - Power Dissipation
200mW
Reverse Transfer Capacitance (Crss)
3pF
RDS(on)
5.3Ω@10V
Number
1 P-Channel
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.5V
Type
P-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.016 g

Overview

Based on Advanced Rugged Technology (ART), this 150 W LDMOS RF transistor is designed for a wide range of applications including industrial, scientific and medical (ISM), broadcast, and communications. This unmatched transistor operates over a frequency range of 1 MHz to 650 MHz.

Applications

  • Switching circuits
  • High-side load switches
  • Relay drivers

Key features

  • Trench MOSFET technology
  • Ultra-fast switching speed
  • 4.5V gate drive
  • AEC-Q101 qualified

Alternatives

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