MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
BUK653R5-55C-VB
60V 210A 375W 3mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs
TO-220ABRoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- BUK653R5-55C-VB
- Store part #
- C52148732
- Package / case
- TO-220AB
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C52148732
Stock & price checked 47 h ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹208.99 | ₹208.99 |
| 10+ | ₹174.38 | ₹1,743.80 |
| 50+ | ₹155.44 | ₹7,772.00 |
| 100+ | ₹133.89 | ₹13,389.00 |
| 500+ | ₹124.31 | ₹62,155.00 |
| 1,000+ | ₹120.17 | ₹1,20,170.00 |
1 × ₹208.99
₹208.99
excl. GST
₹246.61 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
BUK653R5-55C-VB
₹208.99 for 1 + GST
Specifications
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+175℃
- Output Capacitance(Coss)
- 1nF
- Current - Continuous Drain(Id)
- 210A
- Ciss-Input Capacitance
- 9.3nF
- Pd - Power Dissipation
- 375W
- Reverse Transfer Capacitance (Crss)
- 750pF
- RDS(on)
- 3mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 180nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.88 g
Overview
Key features
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Low thermal resistance package
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- Compliant with RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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