MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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25,99,250 in stock
VBsemi ElecDatasheet (PDF)
BUK9612-55B,118-VB
220W 60V 4mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs
TO-263RoHSActive
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- BUK9612-55B,118-VB
- Store part #
- C52191013
- Package / case
- TO-263
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
5 in stock
#C52191013
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹147.82 | ₹147.82 |
| 10+ | ₹120.17 | ₹1,201.70 |
| 50+ | ₹106.24 | ₹5,312.00 |
| 100+ | ₹92.53 | ₹9,253.00 |
| 500+ | ₹84.25 | ₹42,125.00 |
| 1,000+ | ₹80.12 | ₹80,120.00 |
1 × ₹147.82
₹147.82
excl. GST
₹174.43 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
BUK9612-55B,118-VB
₹147.82 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 715pF
- Ciss-Input Capacitance
- 7nF
- Pd - Power Dissipation
- 220W
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+175℃
- Reverse Transfer Capacitance (Crss)
- 360pF
- RDS(on)
- 4mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 96nC
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 2.68 g
Overview
Key features
- Trench power MOSFET
- Low thermal resistance package
- 100% gate resistance (Rg) and unclamped inductive switching (UIS) tested
- RoHS compliant
- Halogen-free
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