MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
BUK964R2-55B-VB
N-Channel 60V 210A 375W Surface Mount TO-263(D2PAK)
TO-263(D2PAK)RoHSActive
MOSFET N-CH 60V 210A TO-263(D2PAK)
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- BUK964R2-55B-VB
- Store part #
- C29779276
- Package / case
- TO-263(D2PAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C29779276
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹192.84 | ₹192.84 |
| 10+ | ₹159.43 | ₹1,594.30 |
| 50+ | ₹141.16 | ₹7,058.00 |
| 100+ | ₹120.37 | ₹12,037.00 |
| 500+ | ₹111.12 | ₹55,560.00 |
| 1,000+ | ₹107.14 | ₹1,07,140.00 |
1 × ₹192.84
₹192.84
excl. GST
₹227.55 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
BUK964R2-55B-VB
₹192.84 for 1 + GST
Specifications
- Drain to Source Voltage
- 60V
- Operating Temperature
- -55℃~+175℃
- Output Capacitance(Coss)
- 935pF
- Current - Continuous Drain(Id)
- 210A
- Ciss-Input Capacitance
- 7.3nF
- Pd - Power Dissipation
- 375W
- Reverse Transfer Capacitance (Crss)
- 647pF
- RDS(on)
- 2.8mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 184nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 4V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.5 g
Overview
Applications
- Synchronous rectification
- Power supply
Key features
- Compliant with halogen-free requirements as defined by IEC 61249-2-21
- Trench power MOSFET
- Low thermal resistance package
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- Compliant with RoHS Directive 2002/95/EC
Alternatives
Similar parts — check the datasheet before substituting.
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