MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
VBsemi ElecDatasheet (PDF)
BUK9E06-55A-VB
N-Channel 60V 120A 230W Through Hole TO-262
TO-262RoHSActive
MOSFET N-CH 60V 120A TO-262
- Manufacturer
- VBsemi Elec
- Manufacturer part #
- BUK9E06-55A-VB
- Store part #
- C22389533
- Package / case
- TO-262
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
10 in stock
#C22389533
Stock & price checked 3 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹141.59 | ₹141.59 |
| 10+ | ₹117.22 | ₹1,172.20 |
| 50+ | ₹103.78 | ₹5,189.00 |
| 100+ | ₹88.44 | ₹8,844.00 |
| 500+ | ₹81.72 | ₹40,860.00 |
| 1,000+ | ₹78.56 | ₹78,560.00 |
1 × ₹141.59
₹141.59
excl. GST
₹167.08 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
BUK9E06-55A-VB
₹141.59 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+175℃
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 120A
- Output Capacitance(Coss)
- 708pF
- Ciss-Input Capacitance
- 5.196nF
- Pd - Power Dissipation
- 230W
- Reverse Transfer Capacitance (Crss)
- 336pF
- RDS(on)
- 6mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 96.5nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 1.82 g
Overview
Key features
- Trench power MOSFET
- Low thermal resistance package
- AEC-Q101 qualified
- 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
- RoHS compliant
- Halogen-free
Alternatives
Similar parts — check the datasheet before substituting.
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