MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
FUXINSEMIDatasheet (PDF)
C2M0080120D
1.2kV 36A 192W 98mΩ 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs
TO-247-3RoHSActive
Silicon Carbide Power MOSFET N-Channel Enhancement Mode
- Manufacturer
- FUXINSEMI
- Manufacturer part #
- C2M0080120D
- Store part #
- C22365189
- Package / case
- TO-247-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
11 in stock
#C22365189
Stock & price checked 7 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹498.94 | ₹498.94 |
| 10+ | ₹426.56 | ₹4,265.60 |
| 30+ | ₹383.55 | ₹11,506.50 |
| 90+ | ₹339.91 | ₹30,591.90 |
| 510+ | ₹320.02 | ₹1,63,210.20 |
| 1,200+ | ₹310.94 | ₹3,73,128.00 |
1 × ₹498.94
₹498.94
excl. GST
₹588.75 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
C2M0080120D
₹498.94 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 1.2kV
- Output Capacitance(Coss)
- 92pF
- Current - Continuous Drain(Id)
- 36A
- Ciss-Input Capacitance
- 1.13nF
- Pd - Power Dissipation
- 192W
- Reverse Transfer Capacitance (Crss)
- 7.5pF
- RDS(on)
- 98mΩ
- Number
- 1 N-channel
- Gate Charge(Qg)
- 71nC
- Type
- N-Channel
- Gate Threshold Voltage (Vgs(th))
- 4V
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Moisture sensitivity
- MSL 1 (unlimited)
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 8.016 g
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