Varnitronics
CJZM718 JSCJ
JSCJ

CJZM718

N-Channel 20V 0.5A 1W Surface Mount DFNWB-8L-EP(2x3)

DFNWB-8L-EP(2x3)ROHS CompliantActive

MOSFET N-CH 20V 0.5A DFNWB-8L-EP(2x3)

Manufacturer
JSCJ
Manufacturer part #
CJZM718
Store part #
C2910049
Package / case
DFNWB-8L-EP(2x3)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,915 in stock

#C2910049

Stock & price checked 10 days ago

QuantityUnit pricePack price
5+₹11.91₹59.55
50+₹9.62₹481.00
150+₹8.47₹1,270.50
500+₹7.61₹3,805.00
3,000+₹6.92₹20,760.00
6,000+₹6.58₹39,480.00

5 × ₹11.91

₹59.55

excl. GST

₹70.27 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

CJZM718

₹59.55 for 5 + GST

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Specifications

Output Capacitance(Coss)
16pF
Ciss-Input Capacitance
100pF
Pd - Power Dissipation
1W
Drain to Source Voltage
20V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
500mA
Reverse Transfer Capacitance (Crss)
12pF
RDS(on)
700mΩ@4.5V
Number
1 N-channel
Gate Charge(Qg)
750nC
Vgs
±6V
Gate Threshold Voltage (Vgs(th))
1.2V
Type
N-Channel

Packaging & compliance

RoHS
ROHS Compliant
Lifecycle
Active
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.056 g

Overview

These devices are N-channel power MOSFETs developed using second-generation MDmesh technology. This revolutionary power MOSFET combines a vertical structure with the company's strip layout to achieve extremely low on-resistance and gate charge. As a result, it is well-suited for the most demanding high-efficiency converters.

Applications

  • Charging circuit
  • Other power management in portable equipments

Key features

  • High DC current gain
  • Low Threshold
  • Small package DFNWB3x2-8L-I
  • Including a CJP718 transistor and a CJ1012 MOSFET independently in a package

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