Jingdao Microelectronics

D3R6N30

N-Channel 30V 80A 82W Surface Mount TO-252W

TO-252WRoHSActive

MOSFET N-CH 30V 80A TO-252W

Manufacturer: Jingdao Microelectronics
Manufacturer part #: D3R6N30
Store part #: C5156807
Package / case: TO-252W
Category: Single FETs, MOSFETs
Packaging: Tape & Reel (TR)

Datasheet (PDF)

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2,290 in stock

#C5156807

Stock & price checked 5 days ago

Quantity	Unit price	Pack price
5+	₹16.89	₹84.45
50+	₹13.45	₹672.50
150+	₹11.72	₹1,758.00
500+	₹10.44	₹5,220.00
2,500+	₹8.97	₹22,425.00
5,000+	₹8.45	₹42,250.00

Quantity (min 5, multiples of 5)

5 × ₹16.89

₹84.45

excl. GST

₹99.65 incl. 18% GST

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Dispatch in 15-18 working days
GST invoice with every order
Standard pack: 2,500 per reel

D3R6N30

₹84.45 for 5 + GST

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Specifications

Output Capacitance(Coss): 268pF
Ciss-Input Capacitance: 2.414nF
Pd - Power Dissipation: 82W
Operating Temperature: -55℃~+150℃
Drain to Source Voltage: 30V
Current - Continuous Drain(Id): 80A
Reverse Transfer Capacitance (Crss): 206pF
RDS(on): 3.6mΩ@10V
Number: 1 N-channel
Gate Charge(Qg): 13nC
Vgs: ±20V
Gate Threshold Voltage (Vgs(th)): 2.5V
Type: N-Channel

Packaging & compliance

RoHS: RoHS
Lifecycle: Active
Packaging: Tape & Reel (TR)
Standard pack: 2,500 / Reel
Sold per: Piece
Minimum order: 5 (multiples of 5)
Unit weight: 0.45 g

Overview

D3R6N30 is an N-channel enhanced MOS field effect transistor. Advanced technology and cell structure make the product have low on resistance, excellent switching performance and high avalanche breakdown withstand voltage. The product can be widely used in uninterruptible power supply and power management field of inverter system.