DF2S6P2CTC,L3F
23.7VC Clamp 80A@8/20us Ipp ESD DIODE CST-2-C
ESD DIODE 5.5VWM 23.7VC CST-2-C
- Manufacturer
- TOSHIBA
- Manufacturer part #
- DF2S6P2CTC,L3F
- Store part #
- C1972971
- Package / case
- CST-2-C
- Category
- TVS Diodes
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
995 in stock
#C1972971
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹46.50 | ₹232.50 |
| 50+ | ₹36.18 | ₹1,809.00 |
| 150+ | ₹31.77 | ₹4,765.50 |
| 500+ | ₹26.25 | ₹13,125.00 |
| 2,500+ | ₹23.80 | ₹59,500.00 |
| 5,000+ | ₹22.32 | ₹1,11,600.00 |
5 × ₹46.50
₹232.50
excl. GST
₹274.35 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 10,000 per reel
DF2S6P2CTC,L3F
₹232.50 for 5 + GST
Specifications
- Clamping Voltage
- 23.7V
- Peak Pulse Current (Ipp)
- 80A@8/20us
- Peak Pulse Power Dissipation (Ppp)
- 1.9kW@8/20us
- Voltage - Breakdown
- 6.7V
- type
- ESD
- Reverse Leakage Current (Ir)
- 100nA
- Reverse Stand-Off Voltage (Vrwm)
- 5.5V
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 10,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.048 g
Overview
The DF2S6P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. The DF2S6P2CTC has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation). Furthermore, the DF2S6P2CTC is housed in an ultra-compact package (1.6 mm×0.8 mm) to meet applications that require a small footprint.
Applications
- Mobile Equipment
- Smartphones
- Tablets
- Notebook PCs
- Desktop PCs
Key features
- Suitable for use with a 5.0 V signal line. (VRWM≤5.5 V)
- Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000 - 4 - 2)
- Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.08 Ω (typ.))
- Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 18 V@IPP = 80 A (typ.))
- Compact package is suitable for use in high density board layouts such as in mobile devices. 1.6 mm×0.8 mm size (Nickname: CST2C)
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