Varnitronics
DMN2015UFDE-7 DIODES
DIODES

DMN2015UFDE-7

660mW 20V 10.5A 11.5mΩ@4.5V 1 N-channel N-Channel UDFN2020-6-EP Single FETs, MOSFETs RoHS

UDFN2020-6-EPROHS3 CompliantActive
Manufacturer
DIODES
Manufacturer part #
DMN2015UFDE-7
Store part #
C581339
Package / case
UDFN2020-6-EP
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

2,485 in stock

#C581339

Stock & price checked 9 days ago

QuantityUnit pricePack price
5+₹21.56₹107.80
50+₹17.07₹853.50
150+₹15.15₹2,272.50
500+₹12.74₹6,370.00
3,000+₹10.09₹30,270.00
6,000+₹9.45₹56,700.00

5 × ₹21.56

₹107.80

excl. GST

₹127.20 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

DMN2015UFDE-7

₹107.80 for 5 + GST

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Specifications

Output Capacitance(Coss)
175pF
Ciss-Input Capacitance
1.779nF
Pd - Power Dissipation
660mW
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
20V
Current - Continuous Drain(Id)
10.5A
Reverse Transfer Capacitance (Crss)
154pF
RDS(on)
11.5mΩ@4.5V
Number
1 N-channel
Gate Charge(Qg)
19.7nC@4.5V
Vgs
±12V
Gate Threshold Voltage (Vgs(th))
1.1V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
5 (multiples of 5)
Unit weight
0.032 g

Overview

This next-generation MOSFET is designed to minimize on-resistance RDS(ON) while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Applications

  • General-purpose interface switch
  • Power management function

Key features

  • 0.6mm thickness — suitable for thin applications
  • 4mm² PCB footprint
  • Low gate threshold voltage
  • Low on-resistance
  • Fully lead-free and fully RoHS compliant
  • Halogen and antimony-free, "Green" device

Alternatives

Similar parts — check the datasheet before substituting.

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