Varnitronics
DMN3066LQ-7 DIODES
DIODES

DMN3066LQ-7

30V 3.6A 810mW 67mΩ@4.5V SOT-23-3 Single FETs, MOSFETs RoHS

SOT-23-3ROHS3 CompliantActive
Manufacturer
DIODES
Manufacturer part #
DMN3066LQ-7
Store part #
C7264653
Package / case
SOT-23-3
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

101 in stock

#C7264653

Stock & price checked 10 days ago

QuantityUnit pricePack price
1+₹32.33₹32.33
10+₹31.46₹314.60
30+₹31.04₹931.20
100+₹30.38₹3,038.00

1 × ₹32.33

₹32.33

excl. GST

₹38.15 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 3,000 per reel

DMN3066LQ-7

₹32.33 for 1 + GST

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Specifications

Operating Temperature
-55℃~+150℃
Drain to Source Voltage
30V
Current - Continuous Drain(Id)
3.6A
Ciss-Input Capacitance
353pF
Pd - Power Dissipation
810mW
RDS(on)
67mΩ@4.5V
Gate Charge(Qg)
4.1nC@4.5V
Gate Threshold Voltage (Vgs(th))
1.5V

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
3,000 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.055 g

Overview

This next-generation MOSFET is designed to minimize on-resistance R<sub>DS(ON)</sub> while maintaining excellent switching performance, making it ideal for high-efficiency power management applications.

Applications

  • Load Switch

Key features

  • High-speed switching
  • Low gate charge: QSW = 5.2 nC (typical)
  • Low output charge: Qoss = 14 nC (typical)
  • Low drain-source on-resistance: RDS(ON) = 3.9 mΩ (typical) (VGS = 10 V)
  • Low leakage current: IDSS = 10 μA (maximum) (VDS = 30 V)
  • Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.2 mA)

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