MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
DMT35M4LFVW-13-HXY
62.5W 30V 55A 4.7mΩ@10V 1 N-channel N-Channel DFN-8L(3x3) Single FETs, MOSFETs
DFN-8L(3x3)RoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- DMT35M4LFVW-13-HXY
- Store part #
- C53263176
- Package / case
- DFN-8L(3x3)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
85 in stock
#C53263176
Stock & price checked 5 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹42.96 | ₹214.80 |
| 50+ | ₹34.41 | ₹1,720.50 |
| 150+ | ₹30.75 | ₹4,612.50 |
| 500+ | ₹26.17 | ₹13,085.00 |
| 2,500+ | ₹24.13 | ₹60,325.00 |
| 5,000+ | ₹22.91 | ₹1,14,550.00 |
5 × ₹42.96
₹214.80
excl. GST
₹253.46 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
DMT35M4LFVW-13-HXY
₹214.80 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 400pF
- Ciss-Input Capacitance
- 3.075nF
- Pd - Power Dissipation
- 62.5W
- Configuration
- Standalone
- Drain to Source Voltage
- 30V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 55A
- Reverse Transfer Capacitance (Crss)
- 315pF
- RDS(on)
- 4.7mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 31.6nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.068 g
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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 | BSZ058N03LSGATMA1-HXY#C53263210HXY MOSFET · DFN-8L(3x3) | HXY MOSFET | DFN-8L(3x3) | 95 | ₹81.19 · 95 in stock | View |
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