MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
DMTH10H005SCT-HXY
178W 100V 120A 4.1mΩ@10V 1 N-channel N-Channel TO-220C Single FETs, MOSFETs
TO-220CRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- DMTH10H005SCT-HXY
- Store part #
- C51949345
- Package / case
- TO-220C
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
37 in stock
#C51949345
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹205.33 | ₹205.33 |
| 10+ | ₹172.89 | ₹1,728.90 |
| 50+ | ₹155.07 | ₹7,753.50 |
| 100+ | ₹134.88 | ₹13,488.00 |
| 500+ | ₹125.86 | ₹62,930.00 |
| 1,000+ | ₹121.78 | ₹1,21,780.00 |
1 × ₹205.33
₹205.33
excl. GST
₹242.29 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 50 per tube
DMTH10H005SCT-HXY
₹205.33 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 592pF
- Ciss-Input Capacitance
- 4.102nF
- Pd - Power Dissipation
- 178W
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Operating Temperature
- -55℃~+150℃
- Current - Continuous Drain(Id)
- 120A
- Reverse Transfer Capacitance (Crss)
- 19.8pF
- RDS(on)
- 4.1mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 69nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tube-packed
- Standard pack
- 50 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 3.12 g
Overview
DMTH10H005SCT utilizes advanced SGT MOSFET technology to achieve low on-resistance RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Key features
- Drain-source voltage VDS = 100 V, drain current ID = 120 A
- On-resistance RDS(ON) < 5.0 mΩ at VGS = 10 V
- N-channel MOSFET
Alternatives
Similar parts — check the datasheet before substituting.
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