MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
From
₹2.32
25,99,250 in stock
MICROCHIPDatasheet (PDF)
DN1509N8-G
N-Channel 90V 300mA 1.62W Surface Mount SOT-89
SOT-89ROHS3 CompliantActive
MOSFET N-CH 90V 300mA SOT-89
- Manufacturer
- MICROCHIP
- Manufacturer part #
- DN1509N8-G
- Store part #
- C616345
- Package / case
- SOT-89
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
143 in stock
#C616345
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹259.89 | ₹259.89 |
| 10+ | ₹220.78 | ₹2,207.80 |
| 30+ | ₹196.00 | ₹5,880.00 |
| 100+ | ₹170.80 | ₹17,080.00 |
| 500+ | ₹159.50 | ₹79,750.00 |
| 1,000+ | ₹154.50 | ₹1,54,500.00 |
1 × ₹259.89
₹259.89
excl. GST
₹306.67 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
DN1509N8-G
₹259.89 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 90V
- Output Capacitance(Coss)
- 20pF
- Current - Continuous Drain(Id)
- 300mA
- Ciss-Input Capacitance
- 150pF
- Pd - Power Dissipation
- 1.62W
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 6Ω@0V
- Number
- 1 N-channel
- Vgs
- ±20V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.138 g
Overview
This low threshold, depletion-mode, normally-on, transistor utilizes an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in Metal-Oxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications
- Normally-on switches
- Battery operated systems
- Converters
- Linear amplifiers
- Constant current sources
- Telecom
Key features
- High-input impedance
- Low-input capacitance
- Fast switching speeds
- Low on-resistance
- Free from secondary breakdown
- Low input and output leakages
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | TN2435N8-G#C629190MICROCHIP · SOT-89-3 | MICROCHIP | SOT-89-3 | 1 | ₹380.69 · 1 in stock | View |
 | 2SK2742-VB#C5179549VBsemi Elec · SOT-89 | VBsemi Elec | SOT-89 | 40 | ₹35.06 · 40 in stock | View |
 | 2SK1485-VB#C692977VBsemi Elec · SOT-89 | VBsemi Elec | SOT-89 | 275 | ₹47.40 · 275 in stock | View |
 | 2SK2110-VB#C7568954VBsemi Elec · SOT-89 | VBsemi Elec | SOT-89 | 50 | ₹34.78 · 50 in stock | View |
 | TN2425N8-G#C629189MICROCHIP · SOT-89-3 | MICROCHIP | SOT-89-3 | 26 | ₹521.45 · 26 in stock | View |
Same category
