MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
MICROCHIPDatasheet (PDF)
DN3545N8-G
N-Channel 450V 200mA 1.6W Surface Mount SOT-89-3
SOT-89-3ROHS3 CompliantActive
MOSFET N-CH 450V 200mA SOT-89-3
- Manufacturer
- MICROCHIP
- Manufacturer part #
- DN3545N8-G
- Store part #
- C556892
- Package / case
- SOT-89-3
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
13 in stock
#C556892
Stock & price checked 9 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹232.44 | ₹232.44 |
| 10+ | ₹199.05 | ₹1,990.50 |
| 30+ | ₹180.83 | ₹5,424.90 |
| 100+ | ₹160.23 | ₹16,023.00 |
| 500+ | ₹150.91 | ₹75,455.00 |
| 1,000+ | ₹146.79 | ₹1,46,790.00 |
1 × ₹232.44
₹232.44
excl. GST
₹274.28 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,000 per reel
DN3545N8-G
₹232.44 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 40pF
- Ciss-Input Capacitance
- 360pF
- Pd - Power Dissipation
- 1.6W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 450V
- Current - Continuous Drain(Id)
- 200mA
- Reverse Transfer Capacitance (Crss)
- 15pF
- RDS(on)
- 20Ω@0V
- Number
- 1 N-channel
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.108 g
Overview
The DN3545 Depletion-mode normally-on transistor uses an advanced vertical Diffusion Metal Oxide Semiconductor (DMOS) structure and a well-proven silicongate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and the high-input impedance and positive-temperature coefficient inherent in MetalOxide Semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS Field-Effect Transistors (FETs) are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.
Applications
- Normally-On Switches
- Solid-State Relays
- Converters
- Linear Amplifiers
- Constant-Current Sources
- Power Supply Circuits
- Telecommunications
Key features
- High Input Impedance
- Low Input Capacitance
- Fast Switching Speeds
- Low On-Resistance
- Free from Secondary Breakdown
- Low Input and Output Leakage
Alternatives
Similar parts — check the datasheet before substituting.
| Part | Manufacturer | Package | Stock | Price from (excl. GST) | Action | |
|---|---|---|---|---|---|---|
 | DMX4022E#C3031419ARK micro · SOT-89 | ARK micro | SOT-89 | 885 | ₹180.18 · 885 in stock | View |
 | DN2450N8-G#C616346MICROCHIP · SOT-89-3 | MICROCHIP | SOT-89-3 | 14 | ₹162.11 · 14 in stock | View |
| VN2450N8-G#C629225MICROCHIP · SOT-89-3 | MICROCHIP | SOT-89-3 | On request | ₹520.80 · 0 in stock | View | |
 | VN2460N8-G#C145396MICROCHIP · SOT-89-3 | MICROCHIP | SOT-89-3 | On request | ₹409.47 · 0 in stock | View |
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