MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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ElecSuperDatasheet (PDF)
ESAC80SN10
N-Channel 100V 92A 125W Surface Mount PDFN5x6-8L
PDFN5x6-8LROHS CompliantActive
MOSFET N-CH 100V 92A PDFN5x6-8L
- Manufacturer
- ElecSuper
- Manufacturer part #
- ESAC80SN10
- Store part #
- C42434108
- Package / case
- PDFN5x6-8L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
2,645 in stock
#C42434108
Stock & price checked 6 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹44.96 | ₹44.96 |
| 10+ | ₹39.33 | ₹393.30 |
| 30+ | ₹36.95 | ₹1,108.50 |
| 100+ | ₹33.93 | ₹3,393.00 |
| 500+ | ₹32.64 | ₹16,320.00 |
| 1,000+ | ₹31.77 | ₹31,770.00 |
1 × ₹44.96
₹44.96
excl. GST
₹53.05 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 5,000 per reel
ESAC80SN10
₹44.96 for 1 + GST
Specifications
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 100V
- Output Capacitance(Coss)
- 910pF
- Current - Continuous Drain(Id)
- 92A
- Ciss-Input Capacitance
- 2.37nF
- Pd - Power Dissipation
- 125W
- Reverse Transfer Capacitance (Crss)
- 14pF
- RDS(on)
- 10mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 45nC@10V
- Gate Threshold Voltage (Vgs(th))
- 2.6V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS Compliant
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 5,000 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.203 g
Overview
The ESAC80SN10 is N-Channel enhancement MOS Field Effect Transistor. Using advanced shielded gate trench technology and design to provide excellent RDS(ON) with low gate charge. Device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product ESAC80SN10 is Pbfree.
Applications
- PWM applications
- Load switch
- Power management in portable/desktop PCs
- DC/DC conversion
Key features
- 100V, RDS(ON)=6.0mΩ(TYP.) @VGS=10V
- Reliable and rugged
- RDS(ON)=8.0mΩ(TYP.) @VGS=4.5V
- Avalanche Rated
- High density cell design for low RDS(on)
- Low leakage current
- Material: Halogen free
Alternatives
Similar parts — check the datasheet before substituting.
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