MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FCD380N60E
N-Channel 600V 10.2A 106W Surface Mount TO-252(DPAK)
TO-252(DPAK)ROHS3 CompliantActive
MOSFET N-CH 600V 10.2A TO-252(DPAK)
- Manufacturer
- onsemi
- Manufacturer part #
- FCD380N60E
- Store part #
- C398044
- Package / case
- TO-252(DPAK)
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
435 in stock
#C398044
Stock & price checked 10 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹201.02 | ₹201.02 |
| 10+ | ₹168.02 | ₹1,680.20 |
| 30+ | ₹149.92 | ₹4,497.60 |
| 100+ | ₹129.47 | ₹12,947.00 |
| 500+ | ₹120.53 | ₹60,265.00 |
| 1,000+ | ₹116.28 | ₹1,16,280.00 |
1 × ₹201.02
₹201.02
excl. GST
₹237.20 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FCD380N60E
₹201.02 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 1.26nF
- Ciss-Input Capacitance
- 1.77nF
- Pd - Power Dissipation
- 106W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 600V
- Current - Continuous Drain(Id)
- 10.2A
- Reverse Transfer Capacitance (Crss)
- 90pF
- RDS(on)
- 380mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 45nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 3.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.466 g
Overview
SuperFET® II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET easy-drive series offers slightly slower rise and fall times compared to the SuperFET II MOSFET series. Noted by the "E" part number suffix, this family helps manage EMI issues and allows for easier design implementation. For faster switching in applications where switching losses must be at an absolute minimum, please consider the SuperFET II MOSFET series.
Key features
- 650V at Tj = 150°C
- Typ. RDS(on) = 320 mΩ
- Ultra Low Gate Charge (Typ. Qg = 34 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 97 pF)
- 100% Avalanche Tested
- An Integrated Gate Resistor
- RoHS Compliant
Alternatives
Similar parts — check the datasheet before substituting.
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