Varnitronics
FCD5N60TM onsemi
onsemi

FCD5N60TM

N-Channel 650V 4.6A 54W Surface Mount TO-252AA

TO-252AAROHS3 CompliantActive

MOSFET N-CH 650V 4.6A TO-252AA

Manufacturer
onsemi
Manufacturer part #
FCD5N60TM
Store part #
C435887
Package / case
TO-252AA
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

4,972 in stock

#C435887

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹155.32₹155.32
10+₹127.26₹1,272.60
30+₹111.82₹3,354.60
100+₹94.20₹9,420.00
500+₹86.58₹43,290.00
1,000+₹82.89₹82,890.00

1 × ₹155.32

₹155.32

excl. GST

₹183.28 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

FCD5N60TM

₹155.32 for 1 + GST

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Specifications

Output Capacitance(Coss)
250pF
Ciss-Input Capacitance
600pF
Pd - Power Dissipation
54W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
650V
Current - Continuous Drain(Id)
4.6A
Reverse Transfer Capacitance (Crss)
22pF
RDS(on)
810mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
16nC@10V
Vgs
±30V
Gate Threshold Voltage (Vgs(th))
3V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.485 g

Overview

SuperFET MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Applications

  • LCD/LED TV and Monitor
  • Lighting
  • Solar Inverter
  • AC-DC Power Supply

Key features

  • 650V @ Tj = 150°C
  • Typ. RDS(on) = 810 mΩ
  • Ultra Low Gate Charge (Typ. Qg = 16 nC)
  • Low Effective Output Capacitance (Typ. Coss(eff.) = 32 pF)
  • 100% Avalanche Tested
  • RoHS Compliant

Alternatives

Similar parts — check the datasheet before substituting.

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