Varnitronics
FCD850N80Z onsemi
onsemi

FCD850N80Z

N-Channel 800V 6A 75W Surface Mount TO-252(DPAK)

TO-252(DPAK)ROHS3 CompliantActive

MOSFET N-CH 800V 6A TO-252(DPAK)

Manufacturer
onsemi
Manufacturer part #
FCD850N80Z
Store part #
C455150
Package / case
TO-252(DPAK)
Packaging
Tape & Reel (TR)
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

1,492 in stock

#C455150

Stock & price checked 6 days ago

QuantityUnit pricePack price
1+₹341.65₹341.65
10+₹292.63₹2,926.30
30+₹261.93₹7,857.90
100+₹230.41₹23,041.00
500+₹178.75₹89,375.00
1,000+₹172.45₹1,72,450.00

1 × ₹341.65

₹341.65

excl. GST

₹403.15 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 2,500 per reel

FCD850N80Z

₹341.65 for 1 + GST

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Specifications

Output Capacitance(Coss)
28pF
Ciss-Input Capacitance
1.315nF
Pd - Power Dissipation
75W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
800V
Current - Continuous Drain(Id)
6A
Reverse Transfer Capacitance (Crss)
0.74pF
RDS(on)
710mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
22nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tape & Reel (TR)
Standard pack
2,500 / Reel
Sold per
Piece
Minimum order
1
Unit weight
0.48 g

Overview

SuperFET II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.

Applications

  • AC - DC Power Supply
  • LED Lighting

Key features

  • Typ. RDS(on)=710 mΩ (Typ.)
  • Ultra Low Gate Charge (Typ. Qg=22 nC)
  • Low Eoss (Typ. 2.3 uJ @ 400V)
  • Low Effective Output Capacitance (Typ. Coss(eff.)=106 μF)
  • 100% Avalanche Tested
  • RoHS Compliant
  • ESD Improved Capability

Alternatives

Similar parts — check the datasheet before substituting.

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