Varnitronics
onsemi

FCP850N80Z

136W 800V 8A 710mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

TO-220ROHS3 CompliantActive
Manufacturer
onsemi
Manufacturer part #
FCP850N80Z
Store part #
C898527
Package / case
TO-220
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

40 in stock

#C898527

Stock & price checked 3 days ago

QuantityUnit pricePack price
1+₹685.76₹685.76
10+₹588.47₹5,884.70
50+₹530.72₹26,536.00
100+₹472.09₹47,209.00
500+₹445.16₹2,22,580.00
800+₹433.00₹3,46,400.00

1 × ₹685.76

₹685.76

excl. GST

₹809.20 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 50 per tube

FCP850N80Z

₹685.76 for 1 + GST

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Specifications

Output Capacitance(Coss)
28pF
Ciss-Input Capacitance
1.315nF
Pd - Power Dissipation
136W
Operating Temperature
-55℃~+150℃
Drain to Source Voltage
800V
Current - Continuous Drain(Id)
8A
Reverse Transfer Capacitance (Crss)
0.74pF
RDS(on)
710mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
29nC@10V
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
4.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
50 / Tube
Sold per
Piece
Minimum order
1
Unit weight
2.68 g

Overview

SuperFET® II MOSFETs are a new series of high-voltage super junction (SJ) MOSFETs utilizing charge balance technology to achieve excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while delivering superior switching performance, dv/dt rates, and higher avalanche energy. In addition, the integrated gate-source ESD diode can withstand HBM surge stress exceeding 2kV. As a result, SuperFET II MOSFETs are ideal for switch-mode power supply applications including audio, laptop adapters, lighting, ATX power supplies, and industrial power supplies.

Applications

  • AC-DC Power Supply
  • LED Lighting

Key features

  • Typical R<sub>DS(on)</sub> = 710 mΩ
  • Ultra-low gate charge (typical Q<sub>g</sub> = 22 nC)
  • Low E<sub>oss</sub> (typical 2.3 μJ @ 400V)
  • Low effective output capacitance (typical C<sub>oss(eff.)</sub> = 106 pF)
  • 100% avalanche tested
  • RoHS compliant
  • Enhanced ESD capability

Alternatives

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