Varnitronics
FCPF220N80 onsemi
onsemi

FCPF220N80

44W 800V 23A 188mΩ@10V 1 N-channel N-Channel TO-220F Single FETs, MOSFETs RoHS

TO-220FROHS3 CompliantActive
Manufacturer
onsemi
Manufacturer part #
FCPF220N80
Store part #
C899131
Package / case
TO-220F
Packaging
Tube-packed
Datasheet (PDF)

Every Order Guarantee

100% Authentic · 30-Day Return or Replacement · policy

15 in stock

#C899131

Stock & price checked 5 days ago

QuantityUnit pricePack price
1+₹541.98₹541.98
10+₹529.00₹5,290.00
30+₹520.57₹15,617.10
100+₹511.92₹51,192.00

1 × ₹541.98

₹541.98

excl. GST

₹639.54 incl. 18% GST

Need volume or a scheduled delivery? Request a quote
  • Dispatch in 15-18 working days
  • GST invoice with every order
  • Standard pack: 1,000 per tube

FCPF220N80

₹541.98 for 1 + GST

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Specifications

Output Capacitance(Coss)
100pF
Ciss-Input Capacitance
3.43nF
Pd - Power Dissipation
44W
Drain to Source Voltage
800V
Operating Temperature
-55℃~+150℃
Current - Continuous Drain(Id)
23A
Reverse Transfer Capacitance (Crss)
0.3pF
RDS(on)
188mΩ@10V
Number
1 N-channel
Gate Charge(Qg)
78nC
Vgs
±20V
Gate Threshold Voltage (Vgs(th))
2.5V
Type
N-Channel

Packaging & compliance

RoHS
ROHS3 Compliant
Lifecycle
Active
ECCN
EAR99
Packaging
Tube-packed
Standard pack
1,000 / Tube
Sold per
Piece
Minimum order
1
Unit weight
2.685 g

Overview

SuperFET II MOSFETs are a new family of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology to achieve excellent low on-resistance and low gate charge performance. This technology is designed to minimize conduction losses while delivering superior switching performance, dv/dt rates, and higher avalanche energy. As a result, SuperFET II MOSFETs are ideal for switched-mode power supply applications such as power factor correction (PFC), server/telecom power supplies, flat panel TV power supplies, ATX power supplies, and industrial power applications.

Applications

  • AC-DC Power Supply - LED Lighting

Key features

  • Typical R<sub>DS(on)</sub> = 188 mΩ
  • Ultra-low gate charge (typical Q<sub>g</sub> = 78 nC)
  • Low output stored energy (typical 7.5 μJ @ 400 V)
  • Low effective output capacitance (typical C<sub>oss(eff.)</sub> = 304 pF)
  • 100% avalanche tested
  • RoHS compliant
  • Improved ESD capability

Alternatives

Similar parts — check the datasheet before substituting.

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