MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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₹2.32
25,99,250 in stock
onsemiDatasheet (PDF)
FDA18N50
N-Channel 500V 19A 239W Through Hole TO-3PN
TO-3PNROHS3 CompliantActive
MOSFET N-CH 500V 19A TO-3PN
- Manufacturer
- onsemi
- Manufacturer part #
- FDA18N50
- Store part #
- C424492
- Package / case
- TO-3PN
- Category
- Single FETs, MOSFETs
- Packaging
- Tube-packed
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
100 in stock
#C424492
Stock & price checked 11 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹306.37 | ₹306.37 |
| 10+ | ₹260.41 | ₹2,604.10 |
| 30+ | ₹211.18 | ₹6,335.40 |
| 90+ | ₹181.70 | ₹16,353.00 |
| 510+ | ₹168.26 | ₹85,812.60 |
| 990+ | ₹162.62 | ₹1,60,993.80 |
1 × ₹306.37
₹306.37
excl. GST
₹361.52 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 30 per tube
FDA18N50
₹306.37 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 330pF
- Ciss-Input Capacitance
- 2.86nF
- Pd - Power Dissipation
- 239W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 500V
- Current - Continuous Drain(Id)
- 19A
- Reverse Transfer Capacitance (Crss)
- 40pF
- RDS(on)
- 265mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 60nC@400V
- Vgs
- ±30V
- Gate Threshold Voltage (Vgs(th))
- 5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tube-packed
- Standard pack
- 30 / Tube
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 7.713 g
Overview
UniFETTM MOSFET is based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
Applications
- PDP TV
- Uninterruptible Power Supply
- AC-DC Power Supply
Key features
- RDS(on) = 265 mΩ (Max.) @ VGS = 10 V, ID = 9.5 A
- Low Gate Charge (Typ. 45 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
Alternatives
Similar parts — check the datasheet before substituting.
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