MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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onsemiDatasheet (PDF)
FDC637BNZ
1.6W 20V 6.2A 24mΩ@4.5V 1 N-channel N-Channel SSOT-6 Single FETs, MOSFETs RoHS
SSOT-6ROHS3 CompliantActive
- Manufacturer
- onsemi
- Manufacturer part #
- FDC637BNZ
- Store part #
- C68302
- Package / case
- SSOT-6
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
115 in stock
#C68302
Stock & price checked 11 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 5+ | ₹19.69 | ₹98.45 |
| 50+ | ₹15.76 | ₹788.00 |
| 150+ | ₹13.79 | ₹2,068.50 |
| 500+ | ₹12.30 | ₹6,150.00 |
| 3,000+ | ₹11.13 | ₹33,390.00 |
| 6,000+ | ₹10.53 | ₹63,180.00 |
5 × ₹19.69
₹98.45
excl. GST
₹116.17 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 3,000 per reel
FDC637BNZ
₹98.45 for 5 + GST
Specifications
- Output Capacitance(Coss)
- 160pF
- Ciss-Input Capacitance
- 895pF
- Pd - Power Dissipation
- 1.6W
- Operating Temperature
- -55℃~+150℃
- Drain to Source Voltage
- 20V
- Current - Continuous Drain(Id)
- 6.2A
- Reverse Transfer Capacitance (Crss)
- 175pF
- RDS(on)
- 24mΩ@4.5V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 12nC@4.5V
- Vgs
- ±12V
- Gate Threshold Voltage (Vgs(th))
- 800mV
- Type
- N-Channel
Packaging & compliance
- RoHS
- ROHS3 Compliant
- Lifecycle
- Active
- ECCN
- EAR99
- Packaging
- Tape & Reel (TR)
- Standard pack
- 3,000 / Reel
- Sold per
- Piece
- Minimum order
- 5 (multiples of 5)
- Unit weight
- 0.037 g
Overview
This N-channel 2.5V-rated MOSFET is manufactured using an advanced PowerTrench process, specially optimized to reduce on-resistance while maintaining low gate charge for superior switching performance. Compared to the larger SO-8 and TSSOP-8 packages, these devices achieve excellent power dissipation in an extremely small footprint.
Applications
- DC-DC Conversion - Load Switch - Battery Protection
Key features
- Maximum rDS(on) = 24 mΩ at VGS = 4.5 V, ID = 6.2 A
- Maximum rDS(on) = 32 mΩ at VGS = 2.5 V, ID = 5.2 A
- Fast switching speed
- Low gate charge (typical 8 nC)
- High-performance trench technology for ultra-low rDS(on)
- SuperSOT-6 package: small footprint (72% smaller than standard SO-8); low profile (1 mm)
- Typical HBM ESD protection rating >2 kV
- Manufactured with eco-friendly packaging materials
- Halogen-free
- RoHS compliant
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