MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
FDD13AN06A0-F085-HXY
45W 60V 50A 11mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- FDD13AN06A0-F085-HXY
- Store part #
- C54582433
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
26 in stock
#C54582433
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹124.47 | ₹124.47 |
| 10+ | ₹102.07 | ₹1,020.70 |
| 30+ | ₹91.09 | ₹2,732.70 |
| 100+ | ₹79.90 | ₹7,990.00 |
| 500+ | ₹65.46 | ₹32,730.00 |
| 1,000+ | ₹62.02 | ₹62,020.00 |
1 × ₹124.47
₹124.47
excl. GST
₹146.87 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDD13AN06A0-F085-HXY
₹124.47 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 145pF
- Ciss-Input Capacitance
- 2.423nF
- Pd - Power Dissipation
- 45W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 60V
- Current - Continuous Drain(Id)
- 50A
- Reverse Transfer Capacitance (Crss)
- 97pF
- RDS(on)
- 11mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 19.3nC@4.5V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 2.5V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.407 g
Overview
FDD13AN06A0 - F085 utilizes advanced trench technology to deliver excellent on-resistance RDS(ON), low gate charge, and operation at gate voltages as low as 4.5V. This device is suitable for battery protection or other switching applications.
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
Key features
- Drain-source voltage V<sub>DS</sub> = 60V, drain current I<sub>D</sub> = 50A
- On-resistance R<sub>DS(ON)</sub> < 15mΩ at gate-source voltage V<sub>GS</sub> = 10V
Alternatives
Similar parts — check the datasheet before substituting.
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