MDD(Microdiode Semiconductor)
2N7002KN-Channel 60V 300mA 300mW Surface Mount SOT-23
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HXY MOSFETDatasheet (PDF)
FDD86102-HXY
27W 100V 40A 15mΩ@10V 1 N-channel N-Channel TO-252-2L Single FETs, MOSFETs
TO-252-2LRoHSActive
- Manufacturer
- HXY MOSFET
- Manufacturer part #
- FDD86102-HXY
- Store part #
- C54582561
- Package / case
- TO-252-2L
- Category
- Single FETs, MOSFETs
- Packaging
- Tape & Reel (TR)
Every Order Guarantee
100% Authentic · 30-Day Return or Replacement · policy
48 in stock
#C54582561
Stock & price checked 4 days ago
| Quantity | Unit price | Pack price |
|---|---|---|
| 1+ | ₹70.29 | ₹70.29 |
| 10+ | ₹56.32 | ₹563.20 |
| 30+ | ₹50.30 | ₹1,509.00 |
| 100+ | ₹42.77 | ₹4,277.00 |
| 500+ | ₹35.47 | ₹17,735.00 |
| 1,000+ | ₹33.33 | ₹33,330.00 |
1 × ₹70.29
₹70.29
excl. GST
₹82.94 incl. 18% GST
- Dispatch in 15-18 working days
- GST invoice with every order
- Standard pack: 2,500 per reel
FDD86102-HXY
₹70.29 for 1 + GST
Specifications
- Output Capacitance(Coss)
- 310pF
- Ciss-Input Capacitance
- 822pF
- Pd - Power Dissipation
- 27W
- Operating Temperature
- -55℃~+150℃
- Configuration
- Standalone
- Drain to Source Voltage
- 100V
- Current - Continuous Drain(Id)
- 40A
- Reverse Transfer Capacitance (Crss)
- 23.5pF
- RDS(on)
- 15mΩ@10V
- Number
- 1 N-channel
- Gate Charge(Qg)
- 22.7nC@10V
- Vgs
- ±20V
- Gate Threshold Voltage (Vgs(th))
- 1.8V
- Type
- N-Channel
Packaging & compliance
- RoHS
- RoHS
- Lifecycle
- Active
- Packaging
- Tape & Reel (TR)
- Standard pack
- 2,500 / Reel
- Sold per
- Piece
- Minimum order
- 1
- Unit weight
- 0.396 g
Overview
The FDD86102 utilizes advanced SGT MOSFET technology to deliver low on-resistance (RDS(ON)), low gate charge, fast switching, and excellent avalanche characteristics. The device is specifically designed for enhanced durability.
Applications
- Consumer electronics power supplies
- Motor control
- Synchronous rectification
- Isolated DC
- Synchronous rectification applications
Key features
- Drain-source voltage (VDS) = 100V, drain current (ID) = 40A
- On-resistance (RDS(ON)) < 23mΩ at gate-source voltage (VGS) = 10V
Alternatives
Similar parts — check the datasheet before substituting.
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|---|---|---|---|---|---|---|
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